High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C
Fahlbusch L, Schöler M, Mattle P, Schnitzer S, Khodamoradi H, Iwamoto N, Svensson BG, Wellmann P (2016)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2016
Journal
Publisher: Trans Tech Publications Ltd
City/Town: Switzerland
Book Volume: 858
Pages Range: 33-36
Conference Proceedings Title: Materials Science Forum (858)
Event location: Giardini Naxos
ISBN: 9783035710427
DOI: 10.4028/www.scientific.net/MSF.858.33
Abstract
We developed a solution growth process related to the combination of the Vertical Bridgman and Vertical Gradient Freeze in a metal free Si-C melt at growth temperatures of 2300 °C. For this procedure we present a detailed description of the growth process and discuss the influence of different growth parameters on the surface morphology and growth rate. So far, we managed to grow SiC layers with a thickness up to 300 μm. The characterization of the crystal morphology was carried out using SEM images and the metal concentration was estimated using SIMS.
Authors with CRIS profile
Lars Fahlbusch
Institute Materials for Electronics and Energy Technology (i-MEET)
Michael Schöler
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Involved external institutions
Norway (NO)How to cite
APA:
Fahlbusch, L., Schöler, M., Mattle, P., Schnitzer, S., Khodamoradi, H., Iwamoto, N.,... Wellmann, P. (2016). High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C. Materials Science Forum, 858, 33-36. https://dx.doi.org/10.4028/www.scientific.net/MSF.858.33
MLA:
Fahlbusch, Lars, et al. "High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C." Materials Science Forum 858 (2016): 33-36.
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