Journal article


Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme


Publication Details
Author(s): Liu X, Wegener CM, Polster S, Jank M, Roosen A, Frey L
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Publication year: 2016
Volume: 12
Journal issue: 3
ISSN: 1551-319X

Abstract

We report for the first time on the impact of a printed indium tin oxide (ITO) layer inserted between a printed silver conductor and solution processed zinc oxide (ZnO) leading to an optimized semiconductor/contact scheme for full print integration. Introducing the ITO interlayer, the contact resistance is reduced by two orders of magnitude. Nanoparticle thin-film transistors (TFTs) in this Ag/ITO contact configuration show improved saturation mobility of 0.53 cm(2) . V-1 . s(-1) with respect to 0.08 cm(2) . V-1 . s(-1) without ITO interlayer. The contact improvement can be attributed to either an increased charge carrier concentration or a reduction of band offsets at the ZnO/electrode interface.



How to cite
APA: Liu, X., Wegener, C.M., Polster, S., Jank, M., Roosen, A., & Frey, L. (2016). Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme. Journal of Display Technology, 12(3). https://dx.doi.org/10.1109/JDT.2015.2445378

MLA: Liu, XinXin, et al. "Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme." Journal of Display Technology 12.3 (2016).

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