Dr.-Ing. Ulrike Künecke


Publications (Download BibTeX)
1 of 2

Conference contribution
Peukert W, Schuster M, Distaso M, et al. (2015)
Synthesis of In2Se3 and Cu2-xSe Micro- and Nanoparticles with Microwave-Assisted Solvothermal and Aqueous Redox Reactions for the Preparation and Stabilization of Printable Precursors for a CuInSe2 Solar Cell Absorber Layer
E-MRS Spring Meeting 2015 Symposium C - Advanced inorganic materials and structures for photovoltaics, 2015

Journal article
Schimmel S, Lindner M, Steigerwald T, et al. (2015)
Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution
Journal of Crystal Growth

Journal article
Schimmel S, Künecke U, Baser HH, et al. (2014)
Towards X-ray in-situ visualization of ammonothermal crystal growth of nitrides
Physica Status Solidi (C) Current Topics in Solid State Physics

Journal article
Zheng Q, Crocco J, Bensalah H, et al. (2013)
Influence of the starting materials used in the crystal growth process of CZT for gamma ray radiation applications
Journal of Crystal Growth

Journal article
Benz F, Strunk HP, Schaab J, et al. (2013)
Tuning the emission colour by manipulating terbium-terbium interactions: Terbium doped aluminum nitride as an example system
Journal of Applied Physics

Conference contribution
Oehlschläger F, Müller J, Künecke U, et al. (2010)
Determination of material inhomogeneities in CuIn(Se,S)(2) solar cell materials by high resolution cathodoluminescence topography
Energy Procedia 2 (2010)

Journal article
Tang K, Künecke U, Oehlschläger F, et al. (2010)
Differential calorimetry study of the initial stage of the sulphurisation process of CuInSe2 solar cell materials
Solar Energy Materials and Solar Cells

Conference contribution
Hens P, Künecke U, Wellmann P - Ed.: Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, et al. (2009)
Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum
Materials Science Forum (Volumes 600-603)

Conference contribution
Hens P, Künecke U, Konias K, et al. (2009)
Germanium Incorporation during PVT Bulk Growth of Silicon Carbide
Materials Science Forum (Volumes 615-617)

Conference contribution
Wellmann P, Müller R, Sakwe A, et al. - Ed.: M. Dudley, C.M. Johnson, A.R. Powell, et al. (2008)
Bulk growth of SiC
MRS Proceedings / Volume 1069 / 2008

Journal article
Sakwe A, Stockmeier M, Hens P, et al. (2008)
Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
Physica Status Solidi B-Basic Solid State Physics

Journal article
Müller R, Künecke U, Weingärtner R, et al. (2006)
Anomalous charge carrier transport phenomena in highly aluminum doped SiC
Physica Status Solidi C: Conferences

Conference contribution
Wellmann P, Queren D, Müller R, et al. - Ed.: Robert P. Devaty, David J. Larkin and Stephen E. Saddow (2006)
Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC
Materials Science Forum (Volumes 527-529)

Journal article
Müller R, Künecke U, Queren D, et al. (2006)
Growth of silicon carbide bulk crystals with a modified physical vapor transport technique
Chemical Vapor Deposition

Journal article
Sakwe A, Müller R, Queren D, et al. (2006)
Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC
Physica Status Solidi (C) Current Topics in Solid State Physics

Share link Get in contact
Last updated on 2016-05-05 at 05:00
PDF downloaded successfully