The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center
Schober M, Jungwirth N, Kobayashi T, Lehmeyer J, Krieger M, Weber HB, Bockstedte M (2023)
Publication Type: Journal article
Publication year: 2023
Journal
Book Volume: 426
Pages Range: 43-48
DOI: 10.4028/p-90qste
Abstract
The TS center is a promising temperature-stable photoluminescence center in 4H SiC. Here we investigate the carbon di-vacancy-antisite complex in the framework of ab initio theory as a tentative model for the TS center. We identify optical transitions of the basal complexes with the TS lines based on excitation energies, Stark shifts, and radiative characteristics. Charge-state-control of the TS center in p- and n-type Schottky contacts is demonstrated. Our experimental findings are consistent with the positively charged carbon di-vacancy-antisite complex.
Authors with CRIS profile
Takuma Kobayashi
Chair of Applied Physics
Johannes Lehmeyer
Chair of Applied Physics
Michael Krieger
Chair of Applied Physics
Heiko Weber
Chair of Applied Physics
Additional Organisation(s)
Involved external institutions
Austria (AT)How to cite
APA:
Schober, M., Jungwirth, N., Kobayashi, T., Lehmeyer, J., Krieger, M., Weber, H.B., & Bockstedte, M. (2023). The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center. Defect and Diffusion Forum, 426, 43-48. https://dx.doi.org/10.4028/p-90qste
MLA:
Schober, M., et al. "The Optical Properties of the Carbon Di-Vacancy-Antisite Complex in the Light of the TS Photoluminescence Center." Defect and Diffusion Forum 426 (2023): 43-48.
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