High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches

Solomko V, Syroiezhin S, Weigel R (2023)

Publication Type: Journal article

Publication year: 2023

Journal

IEEE Transactions on Circuits and Systems II: Express Briefs Institute of Electrical and Electronics Engineers (IEEE)

Pages Range: 1-1

DOI: 10.1109/TCSII.2023.3286328

Abstract

A biasing concept for a stacked MOSFET-based RF switch enabling high DC voltage handling is proposed, making the device suitable for analog switching applications. The biasing network is based on floating bipolar voltage sources generating gate bias voltages for individual transistors in stack in accordance with the applied DC signal. A 10-stack, 2.32 Ω shunt switch implemented in a 65 nm SOI-CMOS switch process demonstrates 0.1 dB bandwidth of 3 GHz with DC voltage handling ranging between –7 V and +17 V and RF power handling capabilities of 26 dBm at 900 MHz in OFF-state.

Authors with CRIS profile

Robert Weigel Lehrstuhl für Technische Elektronik

Additional Organisation(s)

FAU Profilzentrum Licht.Materie.Quantentechnologien (FAU LMQ)

Involved external institutions

Infineon Technologies AG DE Germany (DE)

How to cite

APA:

Solomko, V., Syroiezhin, S., & Weigel, R. (2023). High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches. IEEE Transactions on Circuits and Systems II: Express Briefs, 1-1. https://dx.doi.org/10.1109/TCSII.2023.3286328

MLA:

Solomko, Valentyn, Semen Syroiezhin, and Robert Weigel. "High-Voltage Analog Switch Inspired by Stacked MOSFET-Based RF Switches." IEEE Transactions on Circuits and Systems II: Express Briefs (2023): 1-1.

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