Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding

Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P (2022)

Publication Type: Conference contribution

Publication year: 2022

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications Ltd

Book Volume: 1062 MSF

Pages Range: 74-78

Conference Proceedings Title: Materials Science Forum

Event location: Online

ISBN: 9783035727609

DOI: 10.4028/p-6ef373

Abstract

One setback that hinders the breakthrough of cubic silicon carbide is the lack of suitable seeding material for sublimation growth methods such as PVT. We present the growth of large area cubic silicon carbide material, up to a diameter of 100 mm, with a sublimation growth process called close spaced PVT (CS-PVT). Freestanding 3C-SiC seeding layers were grown by a homoepitaxial CVD process. Subsequently CS-PVT was used to grow crystals up to a thickness of 1 mm. To prevent backside sublimation a carbon containing layer was applied as protection. Due to the presence of a wafer bow as well as a rough backside of the used seeds additional effort was necessary to apply the coating. After growth no visible curvature was present independent of the grown layer thickness and sample size. Raman spectroscopy was performed on the seeds and grown crystals, showing that the overall stress level of the material was reduced by CS-PVT.

Authors with CRIS profile

Manuel Kollmuß Institute Materials for Electronics and Energy Technology (i-MEET) Michael Schöler Institute Materials for Electronics and Energy Technology (i-MEET) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

STMicroelectronics N.V. CH Switzerland (CH) CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT)

How to cite

APA:

Kollmuß, M., Schöler, M., Anzalone, R., Mauceri, M., La Via, F., & Wellmann, P. (2022). Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding. In Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson (Eds.), Materials Science Forum (pp. 74-78). Online: Trans Tech Publications Ltd.

MLA:

Kollmuß, Manuel, et al. "Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding." Proceedings of the 13th European Conference on Silicon Carbide and Related Materials, ECSCRM 2021, Online Ed. Jean François Michaud, Luong Viet Phung, Daniel Alquier, Dominique Planson, Trans Tech Publications Ltd, 2022. 74-78.

BibTeX: Download