A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power
Aguilar E, Issakov V, Weigel R (2020)
Publication Type: Journal article
Publication year: 2020
Journal
Book Volume: 67
Pages Range: 906-910
Article Number: 9052002
Journal Issue: 5
DOI: 10.1109/TCSII.2020.2984597
Abstract
A 130 GHz fully-integrated fundamental-frequency transmitter (TX) module with 4.4 dBm single-ended measured output power in a 130 nm SiGe technology is presented. The transmitter achieves in measurement a phase noise of-88 dBc/Hz at 1 MHz offset frequency from a 130 GHz carrier and a tuning range of 17 GHz. Its relatively compact size, low power consumption and high output power, enables the TX module to be integrated into more complex D-Band transceiver modules for radar and imaging applications. Due to the available measurement equipment, it was only possible to measure the output power single-ended. The measured single-ended output power is 4.4 dBm. This corresponds well to a simulated maximum differential output power of 8.1 dBm. To the best of the author's knowledge, the presented chip exhibits one of the highest output power for fundamental-frequency TX modules among the recently reported state-of-The art chips in this frequency range.
Authors with CRIS profile
Erick Aguilar Mendoza
Lehrstuhl für Technische Elektronik
Robert Weigel
Lehrstuhl für Technische Elektronik
Involved external institutions
Germany (DE)How to cite
APA:
Aguilar, E., Issakov, V., & Weigel, R. (2020). A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power. IEEE Transactions on Circuits and Systems II: Express Briefs, 67(5), 906-910. https://dx.doi.org/10.1109/TCSII.2020.2984597
MLA:
Aguilar, Erick, Vadim Issakov, and Robert Weigel. "A 130 GHz Fully-Integrated Fundamental-Frequency D-Band Transmitter Module with > 4 dBm Single-Ended Output Power." IEEE Transactions on Circuits and Systems II: Express Briefs 67.5 (2020): 906-910.
BibTeX: Download