Pt Nanoclusters Sandwiched between Hexagonal Boron Nitride and Nanographene as van der Waals Heterostructures for Optoelectronics

Düll F, Freiberger EM, Bachmann P, Steinhauer J, Papp C (2019)

Publication Type: Journal article

Publication year: 2019

Journal

DOI: 10.1021/acsanm.9b01522

Abstract

We report on the formation of nanoscopic heterostructures composed of the semimetal graphene, the metal Pt, and the insulator hexagonal boron nitride (h-BN). Both graphene and h-BN are chemically inert two-dimensional materials with similar geometric but different electronic properties. Between these materials, a Pt nanoparticle array was encapsulated. Thereby, the h-BN/Rh(111) nanomesh served as a template for a well-ordered array of Pt nanoclusters, which were overgrown with graphene, forming single-crystal nanoheterostructures. We investigated this process in situ by high-resolution, synchrotron-radiation-based X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. The nanographene layers proved tight against CO under the tested conditions. These nanoheterostructures could find possible application in optoelectronics or as a data storage material. At the same time, our approach represents a new route for the synthesis of nanographene.

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How to cite

APA:

Düll, F., Freiberger, E.M., Bachmann, P., Steinhauer, J., & Papp, C. (2019). Pt Nanoclusters Sandwiched between Hexagonal Boron Nitride and Nanographene as van der Waals Heterostructures for Optoelectronics. ACS Applied Nano Materials. https://dx.doi.org/10.1021/acsanm.9b01522

MLA:

Düll, Fabian, et al. "Pt Nanoclusters Sandwiched between Hexagonal Boron Nitride and Nanographene as van der Waals Heterostructures for Optoelectronics." ACS Applied Nano Materials (2019).

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