Deep electronic levels in n-type and p-type 3C-SiC
Schöler M, Lederer M, Wellmann P (2019)
Publication Type: Journal article, Original article
Publication year: 2019
Journal
Publisher: Trans Tech Publications Ltd
Book Volume: 963
Pages Range: 297-300
Conference Proceedings Title: Materials Science Forum
Event location: Birmingham
ISBN: 9783035713329
DOI: 10.4028/www.scientific.net/MSF.963.297
Abstract
In recent times, 3C-SiC is gaining more and more interest in terms of applications for optoelectronics and quantum computing. Cubic SiC exhibits a number of luminescent defects in the near infrared originating from deep electronic levels. Temperature dependent photoluminescence measurements were conducted on n-type and p-type 3C-SiC in order to investigate the formation of dopant related point defects as well as intrinsic point defects and defect complexes. The results indicate a number of VSi, VC and VCCSi related defects which might be suitable candidates for future optoelectronic applications.
Authors with CRIS profile
Michael Schöler
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Maximilian Lederer
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
How to cite
APA:
Schöler, M., Lederer, M., & Wellmann, P. (2019). Deep electronic levels in n-type and p-type 3C-SiC. Materials Science Forum, 963, 297-300. https://doi.org/10.4028/www.scientific.net/MSF.963.297
MLA:
Schöler, Michael, Maximilian Lederer, and Peter Wellmann. "Deep electronic levels in n-type and p-type 3C-SiC." Materials Science Forum 963 (2019): 297-300.
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