Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth

Schuh P, La Via F, Mauceri M, Zielinski M, Wellmann P (2019)

Publication Type: Journal article

Publication year: 2019

Journal

Materials MDPI

Book Volume: 12

Article Number: 2179

Journal Issue: 13

DOI: 10.3390/ma12132179

Abstract

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.

Authors with CRIS profile

Philipp Schuh Institute Materials for Electronics and Energy Technology (i-MEET) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

CNR Institute for Microelectronics and Microsystems (CNR-IMM) IT Italy (IT) E.T.C. (LPE Spa - Epitaxial Technology Center) IT Italy (IT) NOVASiC FR France (FR)

How to cite

APA:

Schuh, P., La Via, F., Mauceri, M., Zielinski, M., & Wellmann, P. (2019). Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth. Materials, 12(13). https://dx.doi.org/10.3390/ma12132179

MLA:

Schuh, Philipp, et al. "Growth of large-area, stress-free, and bulk-like 3C-SiC (100) using 3C-SiC-on-Si in vapor phase growth." Materials 12.13 (2019).

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