Yu Z, Wang S, Letz S, Bayer CF, Häußler F, Schletz A, SUGANUMA K (2019)
Publication Language: English
Publication Type: Conference contribution, Conference Contribution
Publication year: 2019
Conference Proceedings Title: 2019 International Conference on Electronics Packaging (ICEP)
Event location: Niigata, Japan
URI: https://ieeexplore.ieee.org/document/8733496
DOI: 10.23919/ICEP.2019.8733496
In this study, Ag stress migration bonding (SMB) is demonstrated with various Ag film materials and bonding conditions. The main effects and interactions of various processing parameters such as bonding temperature, process time and applied pressure on the interfacial shear strength of the DUTs are firstly investigated via the design of experiments (DoE) method. The hillock and grain growth process in Ag films deposited on a Si substrate depending on process temperature and time has been investigated. Hillock formation is clearly observed on all film surfaces at 300 °C. Furthermore, various direct bonding tests are carried out with the optimal parameters using two different metal-stacks, Cr/Ni/Ag and Ti/Ag. Compared to the Cr/Ni/Ag metallized samples, a highly increased shear strength of 73 MPa is achieved with Ti/Ag film. In addition, the lifetime of direct bonded Ag joints was examined by passive thermal cycling tests. The results show no significant change in the shear strength after 700 thermal cycles.
APA:
Yu, Z., Wang, S., Letz, S., Bayer, C.F., Häußler, F., Schletz, A., & SUGANUMA, K. (2019). Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments. In 2019 International Conference on Electronics Packaging (ICEP). Niigata, Japan, JP.
MLA:
Yu, Zechun, et al. "Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments." Proceedings of the 2019 International Conference on Electronics Packaging (ICEP), Niigata, Japan 2019.
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