Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements

Beitrag bei einer Tagung
(Konferenzbeitrag)


Details zur Publikation

Autorinnen und Autoren: Gerstner H, Endruschat A, Heckel T, Joffe C, Eckardt B, März M
Herausgeber: IEEE
Jahr der Veröffentlichung: 2018
Sprache: Englisch


Abstract



This paper discusses the
measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in  order to implement simulation models with an
improved mapping of the drain-source voltage vds and drain current id during the switching operation.
Based on the gate charge characteristic measured at an inductive load condition
using different drain current values and temperature settings, the gate current
is allocated to the charging of the gate-drain capacitance Cgd and the gate-source capacitance Cgs. With this approach the
capacitance characteristics Cgs(vgs) and Cgd(vgd) are determined in the full operating range of the gate-source
voltage vgs and  gate-drain voltage vgd.







FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

März, Martin Prof. Dr.
Lehrstuhl für Leistungselektronik


Einrichtungen weiterer Autorinnen und Autoren

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
Gerstner, H., Endruschat, A., Heckel, T., Joffe, C., Eckardt, B., & März, M. (2018). Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements. In IEEE (Eds.), Proceedings of the 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA). Atlanta, GA, US.

MLA:
Gerstner, Holger, et al. "Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements." Proceedings of the 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Atlanta, GA Ed. IEEE, 2018.

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Zuletzt aktualisiert 2019-02-07 um 22:10