A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autorinnen und Autoren: Endruschat A, Novak C, Gerstner H, Heckel T, Joffe C, März M
Zeitschrift: IEEE Transactions on Power Electronics
Jahr der Veröffentlichung: 2019
Band: 34
Heftnummer: 9
Seitenbereich: 9131-9145
ISSN: 0885-8993


Abstract

This paper presents a universal SPICE model for field-effect transistors, which is independent from technology and semiconductor material. The created behavioral simulation model is based on a set of collected measurement data. The temperature-dependent output characteristics are modeled using a hybrid approach consisting of lookup tables and analytical equations. This leads to fast simulation times and very high accuracy. The validity for the static temperature-dependent behavior of this approach is verified for one SiC and one GaN transistor using the respective datasheet curves. The transistors nonlinear capacitances are modeled in dependence of their inter-electrode voltages. In order to verify the validity in the dynamic range, the universal model is applied to a GaN high-electron-mobility transistor. Double pulse measurements are used for the dynamic validation at a characterized measurement test bench regarding its parasitic elements. Therewith a proper validation of the simulation model at switching transients as low as 5 ns is achieved.


FAU-Autorinnen und Autoren / FAU-Herausgeberinnen und Herausgeber

März, Martin Prof. Dr.
Lehrstuhl für Leistungselektronik


Einrichtungen weiterer Autorinnen und Autoren

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)


Zitierweisen

APA:
Endruschat, A., Novak, C., Gerstner, H., Heckel, T., Joffe, C., & März, M. (2019). A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors. IEEE Transactions on Power Electronics, 34(9), 9131-9145. https://dx.doi.org/10.1109/TPEL.2018.2889513

MLA:
Endruschat, Achim, et al. "A Universal SPICE Field-Effect Transistor Model Applied on SiC and GaN Transistors." IEEE Transactions on Power Electronics 34.9 (2019): 9131-9145.

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Zuletzt aktualisiert 2019-09-07 um 09:52