Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements

Rambach M, Frey L, Bauer A, Ryssel H (2006)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2006

Pages Range: 827-830

Event location: Pittsburgh, PA

ISBN: 9780878494255

URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-37849042244&origin=inward

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Rambach, M., Frey, L., Bauer, A., & Ryssel, H. (2006). Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements.

MLA:

Rambach, Martin, et al. Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements. 2006.

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