Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics

Bauer A, Paskaleva A, Lemberger M, Frey L, Ryssel H (2005)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 2005

Pages Range: 125-132

Event location: Quebec

URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844445401&origin=inward

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Bauer, A., Paskaleva, A., Lemberger, M., Frey, L., & Ryssel, H. (2005). Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics. In et al; Timans P.J.; Roozeboom F.; Gusev E.P.; Kwong D.L.; Chen L.J. (Eds.), Proceedings of the 207th ECS Meeting (pp. 125-132). Quebec.

MLA:

Bauer, Anton, et al. "Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics." Proceedings of the 207th ECS Meeting, Quebec Ed. et al; Timans P.J.; Roozeboom F.; Gusev E.P.; Kwong D.L.; Chen L.J., 2005. 125-132.

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