Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide

Bauer A, Mayer P, Frey L, Haeublein V, Ryssel H (1999)

Publication Status: Published

Publication Type: Conference contribution, Conference Contribution

Publication year: 1999

Publisher: IEEE

City/Town: Piscataway, NJ, United States

Book Volume: 1

Pages Range: 30-33

Conference Proceedings Title: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)

Event location: Kyoto, Jpn

ISBN: 078034538X

URI: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033322718&origin=inward

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Bauer, A., Mayer, P., Frey, L., Haeublein, V., & Ryssel, H. (1999). Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide. In Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (pp. 30-33). Kyoto, Jpn: Piscataway, NJ, United States: IEEE.

MLA:

Bauer, Anton, et al. "Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide." Proceedings of the Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Kyoto, Jpn Piscataway, NJ, United States: IEEE, 1999. 30-33.

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