New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr

Biró L, Gyulai J, Havancsák K, Didyk A, Bogen S, Frey L, Ryssel H (1997)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1997

Journal

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Elsevier

Publisher: Elsevier

Book Volume: 122

Pages Range: 559-562

Journal Issue: 3

DOI: 10.1016/S0168-583X(96)00662-3

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät

How to cite

APA:

Biró, L., Gyulai, J., Havancsák, K., Didyk, A., Bogen, S., Frey, L., & Ryssel, H. (1997). New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 122(3), 559-562. https://dx.doi.org/10.1016/S0168-583X(96)00662-3

MLA:

Biró, L., et al. "New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 122.3 (1997): 559-562.

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