Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping

Fet A, Haeublein V, Bauer AJ, Ryssel H, Frey L (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Applied Physics Letters American Institute of Physics (AIP)

Book Volume: 96

Article Number: 053506

Journal Issue: 5

DOI: 10.1063/1.3303976

Abstract

In this letter, an ion implantation approach to engineer the effective work function is discussed and an empirical model to explain the mechanisms of work function change is proposed. It is shown that by doping a TiN/HfSiOx stack with La and F, a silicon conduction band edge and valence band edge metal effective work function of 3.8 and 5.4 eV, respectively, can be achieved. The empirical correlation of the achieved effective work function to the electronegativity of the dopant element is explained.

Authors with CRIS profile

Heiner Ryssel Technische Fakultät Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Fet, A., Haeublein, V., Bauer, A.J., Ryssel, H., & Frey, L. (2010). Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping. Applied Physics Letters, 96(5). https://dx.doi.org/10.1063/1.3303976

MLA:

Fet, A., et al. "Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping." Applied Physics Letters 96.5 (2010).

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