The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon

Laven J, Job R, Schulze HJ, Niedernostheide FJ, Häublein V, Schulze H, Schustereder W, Ryssel H, Frey L (2010)

Publication Type: Journal article

Publication year: 2010

Journal

ECS Transactions Electrochemical Society

Book Volume: 33

Pages Range: 51-62

Journal Issue: 11

DOI: 10.1149/1.3485682

Abstract

Doping profiles in proton and helium co-implanted and annealed n-type float zone silicon wafers are analyzed by means of spreading resistance measurements. After annealing at sufficiently high temperatures and/or long-enough duration, the hydrogen-related donor profiles known from proton implantations are significantly enhanced by the helium irradiation. The resulting profile shape exhibits a strong resemblance to the radiation damage distribution of the co-implantation. By increasing the ultimately introduced num-ber of hydrogen related donors without varying the available amount of hydrogen, it is shown that the donor profile resulting from proton implantation and annealing is limited by the defect species and the implanted hydrogen is supplied in surplus. The maximum of the additionally induced donor distribution by the he-lium implantation shows a different dependency on the fluence compared to the donor maximum induced by mere proton irradia-tion. The diffusion of protons through the irradiated layer during annealing is impacted by the He-irradiation.

Authors with CRIS profile

Johannes Laven Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Infineon Technologies AG DE Germany (DE) Infineon Technologies Austria AG AT Austria (AT) FernUniversität in Hagen DE Germany (DE)

How to cite

APA:

Laven, J., Job, R., Schulze, H.J., Niedernostheide, F.J., Häublein, V., Schulze, H.,... Frey, L. (2010). The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon. ECS Transactions, 33(11), 51-62. https://doi.org/10.1149/1.3485682

MLA:

Laven, Johannes, et al. "The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon." ECS Transactions 33.11 (2010): 51-62.

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