Modeling of the effective work function instability in metal/high-κ dielectric stacks

Fet A, Haeublein V, Bauer AJ, Ryssel H, Frey L (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 107

Article Number: 124514

Journal Issue: 12

DOI: 10.1063/1.3391280

Abstract

This paper discusses the effective work function instability in high-\textgreekk-based MOS gate stacks, which occurs after high temperature (1070 °C) processing. Theories which have been put forward to explain this effect are discussed and unified to a consistent phenomenological model. The Vfb roll-off effect is also discussed and can be described by the model.

Authors with CRIS profile

Heiner Ryssel Technische Fakultät Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Fet, A., Haeublein, V., Bauer, A.J., Ryssel, H., & Frey, L. (2010). Modeling of the effective work function instability in metal/high-κ dielectric stacks. Journal of Applied Physics, 107(12). https://doi.org/10.1063/1.3391280

MLA:

Fet, A., et al. "Modeling of the effective work function instability in metal/high-κ dielectric stacks." Journal of Applied Physics 107.12 (2010).

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