Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition

Lerose D, Bechelany M, Philippe L, Michler J, Christiansen S (2010)

Publication Type: Journal article

Publication year: 2010

Journal

Journal of Crystal Growth Elsevier

Book Volume: 312

Pages Range: 2887-2891

Journal Issue: 20

DOI: 10.1016/j.jcrysgro.2010.07.023

Abstract

Gold dot arrays on (1~1~1) Si substrates obtained through nanosphere lithography (NSL) combined with sputtering and annealing in Ar at 1000~°C are used to catalyze vapor liquid solid (VLS) epitaxial growth of silicon nanowires (Si NWs) using chemical vapor deposition (CVD) with SiH$_4$ in Ar. The NWs grow primarily epitaxially on the underlying (1~1~1) Si wafer following the four independent (1~1~1) directions. The diameter distribution of the wires reflects the diameter distribution of the catalyst gold dot arrays and is therefore predictable. The wire length depends on the size of the gold catalyst for the same CVD parameters. The wire position is foreseeable within the limits of the pattern geometrical quality, but one-to-one growth of NWs to gold dots is not always observed, probably due to (very locally) the remaining presence of silicon oxide. Overall, this inexpensive patterning method for obtaining high-quality crystalline VLS Si NWs by CVD fulfills the requirements of many device applications, where patterning control, quality and reproducibility of the nanostructures are crucial.

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials

Involved external institutions

Eidgenössische Materialprüfungs- und Forschungsanstalt (Empa) / Swiss Federal Laboratories for Materials Science & Technology CH Switzerland (CH) Leibniz-Institut für Photonische Technologien e.V. DE Germany (DE)

How to cite

APA:

Lerose, D., Bechelany, M., Philippe, L., Michler, J., & Christiansen, S. (2010). Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition. Journal of Crystal Growth, 312(20), 2887-2891. https://dx.doi.org/10.1016/j.jcrysgro.2010.07.023

MLA:

Lerose, Damiana, et al. "Ordered arrays of epitaxial silicon nanowires produced by nanosphere lithography and chemical vapor deposition." Journal of Crystal Growth 312.20 (2010): 2887-2891.

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