Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems

Schrüfer D, Ellinger M, Jank M, Frey L, Weigel R, Hagelauer AM (2018)

Publication Language: English

Publication Type: Conference contribution, Conference Contribution

Publication year: 2018

Pages Range: 737-740

Conference Proceedings Title: Proceedings of the 48th European Microwave Conference

Event location: Madrid ES

ISBN: 978-2-87487-051-4

Abstract

A novel architecture for thin-film transistors (TFT) utilising the concept of combining a staggered and a coplanar electrode in a single Alternating Contact TFT (ACTFT) is presented. It exhibits a transit frequency of 49.2MHz for a channel length of 0.6 μm at a drain and gate voltage of 2V. Based on these ACTFTs various n-channel-only digital circuits were fabricated and are presented here.

Authors with CRIS profile

Daniel Schrüfer Lehrstuhl für Technische Elektronik Martin Ellinger Lehrstuhl für Elektronische Bauelemente Michael Jank
Lothar Frey Lehrstuhl für Elektronische Bauelemente Robert Weigel Lehrstuhl für Technische Elektronik Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE)

How to cite

APA:

Schrüfer, D., Ellinger, M., Jank, M., Frey, L., Weigel, R., & Hagelauer, A.M. (2018). Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems. In Proceedings of the 48th European Microwave Conference (pp. 737-740). Madrid, ES.

MLA:

Schrüfer, Daniel, et al. "Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems." Proceedings of the European Microwave Conference, Madrid 2018. 737-740.

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