Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs

Van Esch A, Van Bockstal L, De Boeck J, Verbanck G, Van Steenbergen A, Wellmann P, Grietens B, Bogaerts R, Herlach F, Borghs G (1997)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 1997

Journal

Physical Review B American Physical Society

Publisher: AMERICAN PHYSICAL SOC

Book Volume: 56

Pages Range: 13103-13112

Journal Issue: 20

Abstract

Using a low-temperature molecular-beam epitaxy growth procedure, Ga1-xMnxAs-a III-V diluted magnetic semiconductor-is obtained with Mn concentrations up to x similar to 9%. At a critical temperature T-c (T-c approximate to 50 K for x=0.03-0.05), a paramagnetic to ferromagnetic phase transition occurs as the result of the interaction between Mn-h complexes. Hole transport in these compounds is strongly affected by the antiferromagnetic exchange interaction between holes and Mn 3d spins. A model for the transport behavior both above and below Tc( )is given. Above T-c, all materials exhibit transport behavior which is characteristic for systems near the metal-insulator transition. Below T-c, due to the rising spontaneous magnetization, spin-disorder scattering decreases and the relative position of the Fermi level towards the mobility edge changes. When the magnetization has reached its saturation value (below similar to 10 K) variable-range hopping is the main conduction mechanism. The negative magnetoresistance is the result of the expansion of the hole wave functions in an applied magnetic field.

Authors with CRIS profile

Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Katholieke Universiteit Leuven (KUL) / Catholic University of Leuven BE Belgium (BE) Radboud University Nijmegen NL Netherlands (NL) Interuniversity Microelectronics Centre (IMEC) BE Belgium (BE)

How to cite

APA:

Van Esch, A., Van Bockstal, L., De Boeck, J., Verbanck, G., Van Steenbergen, A., Wellmann, P.,... Borghs, G. (1997). Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs. Physical Review B, 56(20), 13103-13112.

MLA:

Van Esch, A., et al. "Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductor Ga1-xMnxAs." Physical Review B 56.20 (1997): 13103-13112.

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