Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

Beitrag in einer Fachzeitschrift
(Originalarbeit)


Details zur Publikation

Autor(en): Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A
Zeitschrift: Journal of Crystal Growth
Jahr der Veröffentlichung: 2003
Band: 258
Seitenbereich: 261-267
ISSN: 0022-0248


Abstract

We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). 13C
was used as trace in order to determine mass transport paths inside the
SiC source material as well as inside the gas room. The 13C
concentration inside the SiC crystal, SiC source material and parts of
the graphite growth cell was measured using micro-Raman spectroscopy and
secondary ion mass spectroscopy. The SiC growth process was monitored
using digital X-ray imaging. The presented method for the first time
provides experimental access to mass transport which is of particular
interest (i) for fundamental investigations, and (ii) for the
verification of numerical modeling tools which are currently widely in
use for the improvement of the SiC growth process.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät


Autor(en) der externen Einrichtung(en)
University of Montpellier / Université Montpellier


Zitierweisen

APA:
Herro, Z.G., Wellmann, P., Püsche, R., Hundhausen, M., Ley, L., Maier, M.,... Winnacker, A. (2003). Investigation of mass transport during PVT growth of SiC by 13C labeling of source material. Journal of Crystal Growth, 258, 261-267. https://dx.doi.org/10.1016/S0022-0248(03)01538-0

MLA:
Herro, Ziad Georges, et al. "Investigation of mass transport during PVT growth of SiC by 13C labeling of source material." Journal of Crystal Growth 258 (2003): 261-267.

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