Investigation of mass transport during PVT growth of SiC by 13C labeling of source material

Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A (2003)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2003

Journal

Book Volume: 258

Pages Range: 261-267

DOI: 10.1016/S0022-0248(03)01538-0

Abstract

We have investigated experimentally mass transport during physical vapor transport growth of silicon carbide (SiC). ¹³C was used as trace in order to determine mass transport paths inside the SiC source material as well as inside the gas room. The ¹³C concentration inside the SiC crystal, SiC source material and parts of the graphite growth cell was measured using micro-Raman spectroscopy and secondary ion mass spectroscopy. The SiC growth process was monitored using digital X-ray imaging. The presented method for the first time provides experimental access to mass transport which is of particular interest (i) for fundamental investigations, and (ii) for the verification of numerical modeling tools which are currently widely in use for the improvement of the SiC growth process.

Authors with CRIS profile

Involved external institutions

University of Montpellier / Université Montpellier France (FR)

How to cite

APA:

Herro, Z.G., Wellmann, P., Püsche, R., Hundhausen, M., Ley, L., Maier, M.,... Winnacker, A. (2003). Investigation of mass transport during PVT growth of SiC by 13C labeling of source material. Journal of Crystal Growth, 258, 261-267. https://doi.org/10.1016/S0022-0248(03)01538-0

MLA:

Herro, Ziad Georges, et al. "Investigation of mass transport during PVT growth of SiC by 13C labeling of source material." Journal of Crystal Growth 258 (2003): 261-267.

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