Bednorz M, Fromherz T, Matt G, Brabec C, Scharber M, Sariciftci NS (2012)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2012
Publisher: American Institute of Physics (AIP)
Book Volume: 112
Article Number: 114508
Journal Issue: 11
DOI: 10.1063/1.4768271
In this work, we analyze electrically the Al/p-Si/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunction. The barrier height at the p-Si/PCBM interface corresponding to the difference between Si valence band edge and the lowest unoccupied molecular orbital energy level of PCBM is studied with current-voltage (J-V) and capacitance-voltage (C-V) methods and determined to be ≃ 0.55eV. This value is in agreement with the onset energy of spectrally resolved photocurrent measurements presented in a previous publication [Matt, Adv. Mater. 22, 647 (2010)]. For the J-V characteristics, a thorough model based on an interface generation-recombination current is proposed. All relevant energy levels for this model are obtained experimentally. As origin of the large reverse current, the thermal generation of charge carriers throughout the Si depletion region is identified by the thermal activation measurements. © 2012 American Institute of Physics.
APA:
Bednorz, M., Fromherz, T., Matt, G., Brabec, C., Scharber, M., & Sariciftci, N.S. (2012). Electrical properties of pSi/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunctions: Experimental and theoretical evaluation of diode operation. Journal of Applied Physics, 112(11). https://doi.org/10.1063/1.4768271
MLA:
Bednorz, Mateusz, et al. "Electrical properties of pSi/[6,6] phenyl-C61 butyric acid methyl ester/Al hybrid heterojunctions: Experimental and theoretical evaluation of diode operation." Journal of Applied Physics 112.11 (2012).
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