SiC single crystal growth by a modified physical vapor transport technique
Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, Dedulle J, Pons M (2005)
Publication Language: English
Publication Status: Published
Publication Type: Journal article
Publication year: 2005
Journal
Publisher: Elsevier
Book Volume: 275
Pages Range: E555-E560
Journal Issue: 1-2
DOI: 10.1016/j.jcrysgro.2004.11.070
Abstract
We have developed a modified physical vapor transport (M-PVT) growth technique for the preparation of SiC single crystals which makes use of an additional gas pipe in order to control the gas phase composition of the conventional physical vapor transport (PVT) configuration. We discuss the experimental implementation of the extra gas pipe by comparing crystal growth runs under various gas flow conditions with numerical simulations. The potential of the M-PVT growth method will be demonstrated by showing the improved doping characteristics when performing nitrogen, phosphorus and aluminum doping of SiC using the additional gas pipe for dopant supply. (C) 2004 Elsevier B.V. All rights reserved.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
Involved external institutions
France (FR)How to cite
APA:
Wellmann, P., Desperrier, P., Müller, R., Straubinger, T., Winnacker, A., Baillet, F.,... Pons, M. (2005). SiC single crystal growth by a modified physical vapor transport technique. Journal of Crystal Growth, 275(1-2), E555-E560. https://dx.doi.org/10.1016/j.jcrysgro.2004.11.070
MLA:
Wellmann, Peter, et al. "SiC single crystal growth by a modified physical vapor transport technique." Journal of Crystal Growth 275.1-2 (2005): E555-E560.
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