Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes

Laudenbach J, Hennrich F, Telg H, Kappes M, Maultzsch J (2013)


Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Publisher: AMER PHYSICAL SOC

Book Volume: 87

Journal Issue: 16

DOI: 10.1103/PhysRevB.87.165423

Open Access Link: https://arxiv.org/abs/1212.4727

Abstract

We present a resonance Raman study of the disorder-induced D mode in a sample highly enriched with semiconducting (9,7) single-walled carbon nanotubes in the excitation energy range of 1.49-2.05 eV. The intensity of the D mode shows a resonance behavior near the optical transition of the (9,7) tube. The well-known dispersion of the D-mode frequency, on the other hand, is not observed at the resonance, but only above a certain excitation energy. We explain our results by numerical simulations of the D-mode spectra. DOI: 10.1103/PhysRevB.87.165423

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APA:

Laudenbach, J., Hennrich, F., Telg, H., Kappes, M., & Maultzsch, J. (2013). Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes. Physical Review B, 87(16). https://doi.org/10.1103/PhysRevB.87.165423

MLA:

Laudenbach, Jan, et al. "Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes." Physical Review B 87.16 (2013).

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