Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures

Banzhaf C, Grieb M, Trautmann A, Bauer A, Frey L (2013)

Publication Status: Published

Publication Type: Authored book, Volume of book series

Publication year: 2013

Pages Range: 691-694

Event location: St. Petersburg

ISBN: 9783037856246

DOI: 10.4028/www.scientific.net/MSF.740-742.691

Abstract

This study focuses on the characterization of silicon dioxide (SiO) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (D) of 110 cm eV under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm. © (2013) Trans Tech Publications, Switzerland.

Authors with CRIS profile

Christian Banzhaf Lehrstuhl für Elektronische Bauelemente Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Germany (DE)

How to cite

APA:

Banzhaf, C., Grieb, M., Trautmann, A., Bauer, A., & Frey, L. (2013). Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures.

MLA:

Banzhaf, Christian, et al. Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures. 2013.

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