Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals

Bisri SZ, Piliego C, Yarema M, Heiß W, Loi MA (2013)

Publication Language: English

Publication Status: Published

Publication Type: Journal article

Publication year: 2013

Journal

Advanced Materials Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 25

Pages Range: 4309-4314

Journal Issue: 31

DOI: 10.1002/adma.201205041

Abstract

PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.

Authors with CRIS profile

Wolfgang Heiß Professur für Werkstoffwissenschaften (lösungsprozessierte Halbleitermaterialien)

Involved external institutions

University of Groningen / Rijksuniversiteit Groningen NL Netherlands (NL) Johannes Kepler Universität (JKU) Linz AT Austria (AT)

How to cite

APA:

Bisri, S.Z., Piliego, C., Yarema, M., Heiß, W., & Loi, M.A. (2013). Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals. Advanced Materials, 25(31), 4309-4314. https://doi.org/10.1002/adma.201205041

MLA:

Bisri, Satria Zulkarnaen, et al. "Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals." Advanced Materials 25.31 (2013): 4309-4314.

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