Layer-number determination in graphene by out-of-plane phonons

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Herziger F, May P, Maultzsch J
Zeitschrift: Physical Review B
Verlag: AMER PHYSICAL SOC
Jahr der Veröffentlichung: 2012
Band: 85
Heftnummer: 23
ISSN: 1098-0121


Abstract


We present and discuss a double-resonant Raman mode in few-layer graphene that is able to probe the number of graphene layers. This so-called N mode on the low-frequency side of the G mode results from a double-resonant Stokes-anti-Stokes process combining an longitudinal optical (LO) and an out-of-plane (ZO') phonon. Simulations of the double-resonant Raman spectra in bilayer graphene show very good agreement with the experiments.



FAU-Autoren / FAU-Herausgeber

Maultzsch, Janina Prof. Dr.
Lehrstuhl für Experimentalphysik


Autor(en) der externen Einrichtung(en)
Technische Universität Berlin


Zitierweisen

APA:
Herziger, F., May, P., & Maultzsch, J. (2012). Layer-number determination in graphene by out-of-plane phonons. Physical Review B, 85(23). https://dx.doi.org/10.1103/PhysRevB.85.235447

MLA:
Herziger, Felix, Patrick May, and Janina Maultzsch. "Layer-number determination in graphene by out-of-plane phonons." Physical Review B 85.23 (2012).

BibTeX: 

Zuletzt aktualisiert 2018-08-08 um 05:19