Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2003
Band: 433-436
Seitenbereich: 325
ISSN: 0255-5476
eISSN: 1662-9752


The excitation energy dependence of the Raman scattering intensities of longitudinal modes of various SiC-polytypes was measured in the UV-spectral range for excitation energies tuned between 3.8eV and 5eV. The Raman scattering intensity of the unfolded longitudinal optical mode shows a pronounced decrease for all polytypes in the UV-spectral range, except for 3C-SiC. It is shown, that the position of the decrease in the intensity is related with the bandgap of the polytype under consideration. We explain this decreasing scattering intensity by a destructive interference of a resonant and an non-resonant contribution to the Raman scattering cross-section.

FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 10:38