Investigation of mass transport during SiC PVT growth using digital X-Ray Imaging, 13C labeling of source material and numerical modeling

Journal article


Publication Details

Author(s): Durst F, Hundhausen M, Winnacker A, Ley L
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2003
Volume: 433-436
Pages range: 9
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

We have analyzed the mass transport during physical vapor transport growth of SiC using 13C for labeling of the SiC gas species (i.e. Si 2C and SiC2) paths and digital x-ray imaging in order to monitor the evolution of the SiC crystal and SiC source material. The distribution of Si13C was investigated after growth by Micro-Raman spectroscopy. The slow onset of the 13C incorporation into the SiC crystal as well as the enrichment of 13C in the residual source material indicate that the major mass transport is conducted through the center of the source material and not along the hot crucible walls where SiC consumption is observed first. Numerical modeling of sublimation and recrystallization inside the SiC source material has been carried out. Effects like the formation of a condensed disk on top of the source material, consumption of SiC close to the hot crucible walls, etc. are described well. The experimental as well as numerical methods are believed to be useful tools for scaling up current growth setups towards large single crystal diameters.


FAU Authors / FAU Editors

Durst, Franz Prof. Dr.
Technische Fakultät
Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät
Winnacker, Albrecht Prof. Dr.
Technische Fakultät

Last updated on 2018-09-08 at 10:38