Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors

Erlbacher T, Schwarzmann H, Bauer AJ, Doehler GH, Schreivogel M, Lutz T, Guillen FH, Graf J, Fix R, Frey L (2015)

Publication Status: Published

Publication Type: Journal article

Publication year: 2015

Journal

Journal of Vacuum Science & Technology B American Institute of Physics (AIP)

Publisher: A V S AMER INST PHYSICS

Book Volume: 33

Journal Issue: 1

DOI: 10.1116/1.4903054

Abstract

The effect of mobile ions on electrical performance in ion-sensitive metal-oxide-semiconductor field effect transistor fabricated on 4H silicon carbide for the application as chemical fluid and gas sensors in harsh environments was investigated. The drift and diffusion of these mobile ions in the dielectric gate stack were identified as the source for a change in the sensor signal. The movement of the ions and the resulting electrical properties were successfully modeled using a novel drift-diffusion model implemented in TCAD simulation software. The diffusion coefficient and activation energy for drift and diffusion of sodium through an amorphous silicon nitride layer were estimated from these simulations. (C) 2014 American Vacuum Society.

Authors with CRIS profile

Lothar Frey Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB) DE Germany (DE) Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE) Robert Bosch GmbH DE Germany (DE)

How to cite

APA:

Erlbacher, T., Schwarzmann, H., Bauer, A.J., Doehler, G.H., Schreivogel, M., Lutz, T.,... Frey, L. (2015). Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors. Journal of Vacuum Science & Technology B, 33(1). https://doi.org/10.1116/1.4903054

MLA:

Erlbacher, Tobias, et al. "Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors." Journal of Vacuum Science & Technology B 33.1 (2015).

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