Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC

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Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2000
Band: 338-342
Seitenbereich: 583
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

We undertook a study of the intensities of optical vibrational modes in the Raman spectrum of 6H-SiC as a function of excitation energy between 2.4 eV and 4.9 eV. A disappearance of the LO0 mode which is the longitudinal optical mode with the highest frequency is observed at 4.38 eV. The result is explained in the framework of a bond-Raman-polarizability model for the Raman scattering cross section as due to the cancellation of the energy dependent bond-Raman polarizabilities of intra- and inter-bilayer bonds that connect the Si and C planes in SiC.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 05:54