Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals
Selder M, Kadinski L, Durst F, Straubinger T, Wellmann P, Hofmann HD (2001)
Publication Language: English
Publication Type: Journal article, Original article
Publication year: 2001
Journal
Publisher: Trans Tech Publications
Edited Volumes: Materials Science Forum
City/Town: Uetikon-Zuerich, Switzerland
Book Volume: 353-356
Pages Range: 65-68
Conference Proceedings Title: Materials Science Forum (Volumes 353-356)
Event location: Kloster Banz
DOI: 10.4028/www.scientific.net/MSF.353-356.65
Abstract
The thermal stress distribution in growing SiC bulk single crystals is analyzed by a Finite Volume solution approach using anisotropic elasticity theory. The stress calculations are based on a global simulation of heat and mass transfer during the SiC bulk growth process. The temporal evolution of the thermal stress distribution inside the growing crystal is studied. It is found that the conditions for thermal stress formation at fixed positions in the crystal vary significantly during growth. The impact of the stress boundary conditions (free/fixed surfaces) on this behaviour is investigated. The calculated stresses exceed considerably the critical resolved shear stress in SiC which indicates that the observed dislocation formation under the established growth conditions should be caused at least partly by thermal stresses.
Authors with CRIS profile
Franz Durst
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
How to cite
APA:
Selder, M., Kadinski, L., Durst, F., Straubinger, T., Wellmann, P., & Hofmann, H.-D. (2001). Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals. Materials Science Forum, 353-356, 65-68. https://doi.org/10.4028/www.scientific.net/MSF.353-356.65
MLA:
Selder, Markus, et al. "Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals." Materials Science Forum 353-356 (2001): 65-68.
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