Hertel S, Finkler A, Krieger M, Weber HB (2015)
Publication Type: Journal article
Publication year: 2015
Publisher: Trans Tech Publications Ltd
Book Volume: 821-823
Pages Range: 933-936
ISBN: 9783038354789
DOI: 10.4028/www.scientific.net/MSF.821-823.933
Epitaxial graphene on silicon carbide (SiC) can easily be grown by thermal decomposition. A welldefined epitaxial interface between graphene and substrate is formed, especially when the silicon face of hexagonal polytypes is employed. It is found that as-grown monolayer graphene with interfacial buffer layer provides perfectly ohmic contacts to n-type SiC - even to low-doped epitaxial layers without contact implantation. Contact resistances to highly doped samples are competitive with conventional annealed nickel (Ni) contacts; a direct comparison of Ni and graphene contacts on 4H-SiC resulted in an one order of magnitude reduction of the contact resistance in the case of graphene contacts. On highly doped 6H-SiC, a specific contact resistance as low as ρC = 5.9·10-6 Ωcm2 was found. This further improvement compared to 4H-SiC is assigned to better matching of work functions at the Schottky-like interface.
APA:
Hertel, S., Finkler, A., Krieger, M., & Weber, H.B. (2015). Graphene Ohmic Contacts to n-type Silicon Carbide (0001). Materials Science Forum, 821-823, 933-936. https://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.933
MLA:
Hertel, Stefan, et al. "Graphene Ohmic Contacts to n-type Silicon Carbide (0001)." Materials Science Forum 821-823 (2015): 933-936.
BibTeX: Download