Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts

Giannazzo F, Hertel S, Albert A, La Magna A, Roccaforte F, Krieger M, Weber HB (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Materials Science Forum Trans Tech Publications

Publisher: Trans Tech Publications

Book Volume: 778-780

Pages Range: 1142-1145

DOI: 10.4028/www.scientific.net/MSF.778-780.1142

Abstract

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 10¹⁵ cm^-3) SiC, and a specific contact resistance as low as ρC = 5.9×10^-6 Ωcm² can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS. © (2014) Trans Tech Publications, Switzerland.

Authors with CRIS profile

Stefan Hertel Chair of Applied Physics Michael Krieger Chair of Applied Physics Heiko Weber Chair of Applied Physics

Involved external institutions

Consiglio Nazionale delle Ricerche (CNR) / National Research Council of Italy

Italy (IT)

How to cite

APA:

Giannazzo, F., Hertel, S., Albert, A., La Magna, A., Roccaforte, F., Krieger, M., & Weber, H.B. (2014). Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts. Materials Science Forum, 778-780, 1142-1145. https://doi.org/10.4028/www.scientific.net/MSF.778-780.1142

MLA:

Giannazzo, Filippo, et al. "Electrical nanocharacterization of epitaxial graphene/silicon carbide Schottky contacts." Materials Science Forum 778-780 (2014): 1142-1145.

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