Detailed arsenic concentration profiles at Si/SiO2 interfaces

Pei L, Duscher G, Steen C, Pichler P, Ryssel H, Napolitani E, De Salvador D, Piro AM, Terrasi AT, Severac F, Cristiano F, Ravichandran K, Gupta N, Windl W (2008)

Publication Type: Journal article, Original article

Publication year: 2008

Journal

Journal of Applied Physics AIP Publishing

Book Volume: 104

Article Number: 043507

Journal Issue: 4

DOI: 10.1063/1.2967713

Authors with CRIS profile

Peter Pichler Lehrstuhl für Elektronische Bauelemente

Involved external institutions

Ohio State University

United States (USA) (US) Université Fédérale de Toulouse Midi-Pyrénées

France (FR) North Carolina State University

United States (USA) (US) University of Padua / Universita degli Studi di Padova

Italy (IT) Università degli Studi di Catania

Italy (IT)

How to cite

APA:

Pei, L., Duscher, G., Steen, C., Pichler, P., Ryssel, H., Napolitani, E.,... Windl, W. (2008). Detailed arsenic concentration profiles at Si/SiO2 interfaces. Journal of Applied Physics, 104(4). https://dx.doi.org/10.1063/1.2967713

MLA:

Pei, Lirong, et al. "Detailed arsenic concentration profiles at Si/SiO2 interfaces." Journal of Applied Physics 104.4 (2008).

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