Implanted bottom gate for epitaxial graphene on silicon carbide

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autor(en): Waldmann D, Jobst J, Fromm F, Speck F, Seyller T, Krieger M, Weber HB
Zeitschrift: Journal of Physics D-Applied Physics
Verlag: Institute of Physics: Hybrid Open Access
Jahr der Veröffentlichung: 2012
Band: 45
Seitenbereich: 154006
ISSN: 0022-3727


We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between. © 2012 IOP Publishing Ltd.

FAU-Autoren / FAU-Herausgeber

Fromm, Felix
Lehrstuhl für Laserphysik
Jobst, Johannes
Lehrstuhl für Angewandte Physik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Seyller, Thomas PD Dr.
Naturwissenschaftliche Fakultät
Speck, Florian
Lehrstuhl für Laserphysik
Waldmann, Daniel
Lehrstuhl für Angewandte Physik
Weber, Heiko B. Prof. Dr.
Lehrstuhl für Angewandte Physik

Zusätzliche Organisationseinheit(en)
Exzellenz-Cluster Engineering of Advanced Materials


Waldmann, D., Jobst, J., Fromm, F., Speck, F., Seyller, T., Krieger, M., & Weber, H.B. (2012). Implanted bottom gate for epitaxial graphene on silicon carbide. Journal of Physics D-Applied Physics, 45, 154006.

Waldmann, Daniel, et al. "Implanted bottom gate for epitaxial graphene on silicon carbide." Journal of Physics D-Applied Physics 45 (2012): 154006.


Zuletzt aktualisiert 2018-09-08 um 20:38