Growth of 3C-SiC Bulk Material by the Modified Lely-Method

Journal article

Publication Details

Author(s): Krieger M, Hundhausen M, Ley L
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publication year: 2004
Volume: 457-460
Pages range: 151
ISSN: 0255-5476
eISSN: 1662-9752


The growth of cubic 3C-SiC single crystals by the modified Lely method is reported. Free-standing 200μm thick 3C-SiC epilayers were employed as seed crystals. The source material consisted of stoichiometric SiC; in addition, a separate Si source was deposited in the furnace at a temperature of about 1500°C. The temperature of the seed crystal was kept in the range of (1850-1950)°C. The growth rate is equal to 0.05mm/h and a nitrogen donor concentration of (2-6) ×1018 cm-3 is determined in the grown 3C-SiC.

FAU Authors / FAU Editors

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Krieger, Michael Dr.
Lehrstuhl für Angewandte Physik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Last updated on 2018-07-08 at 22:17