Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Wehrfritz P, Fromm F, Malzer S, Seyller T
Zeitschrift: Journal of Physics D-Applied Physics
Verlag: Institute of Physics: Hybrid Open Access
Jahr der Veröffentlichung: 2014
Band: 47
Seitenbereich: 305103 (5pp)
ISSN: 0022-3727


Abstract


We report on top-gated field effect devices built from quasi-freestanding monolayer graphene (QFMLG) on 6H-SiC(0001) in combination with a silicon nitride (SiN) gate dielectric. SiN was grown by plasma enhanced chemical vapour deposition. The composition of the dielectric was investigated by x-ray photoelectron spectroscopy (XPS). Spectroscopic and electrical characterization of the graphene layers were done by XPS, Raman spectroscopy and Hall effect measurements before and after SiN deposition. In contrast to previous reports on SiN/graphene, we observe that our dielectric layer induces strong n-type doping. With such a gate insulator, the neutrality level of the QFMLG could be accessed by an appropriate gate voltage. © 2014 IOP Publishing Ltd.



FAU-Autoren / FAU-Herausgeber

Fromm, Felix
Lehrstuhl für Laserphysik
Malzer, Stefan Dr.
Institut für Physik der Kondensierten Materie
Seyller, Thomas PD Dr.
Lehrstuhl für Laserphysik
Wehrfritz, Peter
Lehrstuhl für Laserphysik


Zitierweisen

APA:
Wehrfritz, P., Fromm, F., Malzer, S., & Seyller, T. (2014). Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate. Journal of Physics D-Applied Physics, 47, 305103 (5pp). https://dx.doi.org/10.1088/0022-3727/47/30/305103

MLA:
Wehrfritz, Peter, et al. "Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate." Journal of Physics D-Applied Physics 47 (2014): 305103 (5pp).

BibTeX: 

Zuletzt aktualisiert 2018-26-07 um 22:23