Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling
Wellmann P, Herro ZG, Selder M, Durst F, Püsche R, Hundhausen M, Ley L, Winnacker A (2003)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2003
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 433-436
Pages Range: 9-12
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
Event location: Linkoping
DOI: 10.4028/www.scientific.net/MSF.433-436.9
Abstract
We have analyzed the mass transport during physical vapor transport growth of SiC using C-13 for labeling of the SiC gas species (i.e. Si2C and SiC2) paths and digital x-ray imaging in order to monitor the evolution of the SiC crystal and SiC source material. The distribution of (SiC)-C-13 was investigated after growth by Micro-Raman spectroscopy. The slow onset of the C-13 incorporation into the SiC crystal as well as the enrichment of C-13 in the residual source material indicate that the major mass transport is conducted through the center of the source material and not along the hot crucible walls where SiC consumption is observed first. Numerical modeling of sublimation and recrystallization inside the SiC source material has been carried out. Effects like the formation of a condensed disk on top of the source material, consumption of SiC close to the hot crucible walls, etc. are described well. The experimental as well as numerical methods are believed to be useful tools for scaling up current growth setups towards large single crystal diameters.
Authors with CRIS profile
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Martin Hundhausen
Lehrstuhl für Laserphysik
Lothar Ley
Naturwissenschaftliche Fakultät
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Wellmann, P., Herro, Z.G., Selder, M., Durst, F., Püsche, R., Hundhausen, M.,... Winnacker, A. (2003). Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling. Materials Science Forum, 433-436, 9-12. https://doi.org/10.4028/www.scientific.net/MSF.433-436.9
MLA:
Wellmann, Peter, et al. "Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling." Materials Science Forum 433-436 (2003): 9-12.
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