Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals
Bickermann M, Weingärtner R, Herro ZG, Hofmann HD, Künecke U, Wellmann P, Winnacker A (2003)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2003
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 433-436
Pages Range: 337-340
Conference Proceedings Title: Materials Science Forum (Volumes 433-436)
Event location: Linkoping
DOI: 10.4028/www.scientific.net/MSF.433-436.337
Abstract
Electrical and optical characterization was performed to obtain information about the doping and compensation levels of samples cut from boron doped, physical vapor transport (PVT) grown 6H-SiC crystals. Values for N-A and N-D can be derived from analysis on temperature dependent Hall effect measurement data. The charge carrier concentration p at room temperature depends approximately linearly on N-A/N-D. The below band-gap absorption (BBGA) maximum at about 730 nm is correlated mainly to N-A, and, for constant N-A, is slightly anti-correlated to N-D. The same results can be obtained from an rootalpha vs. E plot extrapolated to alpha = 0 in the near band-gap region, as the broad absorption band induces a shift in the optically detected band-gap towards lower energies. Absorption measurements can give an estimation of N-A-N-D in boron doped SiC samples, and from wafers cut from the same crystal, the concentration of boron and compensating impurities can be evaluated.
Authors with CRIS profile
Matthias Bickermann
Technische Fakultät
Ulrike Künecke
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Albrecht Winnacker
Technische Fakultät
How to cite
APA:
Bickermann, M., Weingärtner, R., Herro, Z.G., Hofmann, H.-D., Künecke, U., Wellmann, P., & Winnacker, A. (2003). Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals. Materials Science Forum, 433-436, 337-340. https://dx.doi.org/10.4028/www.scientific.net/MSF.433-436.337
MLA:
Bickermann, Matthias, et al. "Electrical and optical characterization of p-type boron-doped 6H-SiC bulk crystals." Materials Science Forum 433-436 (2003): 337-340.
BibTeX: Download