Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source

Desperrier P, Müller R, Winnacker A, Wellmann P (2004)


Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2004

Journal

Publisher: Trans Tech Publications

City/Town: Switzerland

Book Volume: 457-460

Pages Range: 727-730

Conference Proceedings Title: Materials Science Forum (Volumes 457-460)

Event location: Lyon FR

DOI: 10.4028/www.scientific.net/MSF.457-460.727

Abstract

In this paper we report bulk SiC doping with phosphorous by the modified physical vapor transport (M-PVT) method using phosphine as source. Near infrared absorption mapping was carried out on longitudinal cuts of the SiC crystals in order to verify phosphorous doping. The phosphorous concentration determined by the way of glow discharge mass spectroscopy (GDMS) measurements was up to N-D = 1.8 (.) 10(17)cm(-3).

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How to cite

APA:

Desperrier, P., Müller, R., Winnacker, A., & Wellmann, P. (2004). Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source. Materials Science Forum, 457-460, 727-730. https://doi.org/10.4028/www.scientific.net/MSF.457-460.727

MLA:

Desperrier, Patrick, et al. "Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source." Materials Science Forum 457-460 (2004): 727-730.

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