Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source
Desperrier P, Müller R, Winnacker A, Wellmann P (2004)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2004
Journal
Publisher: Trans Tech Publications
City/Town: Switzerland
Book Volume: 457-460
Pages Range: 727-730
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Event location: Lyon
DOI: 10.4028/www.scientific.net/MSF.457-460.727
Abstract
In this paper we report bulk SiC doping with phosphorous by the modified physical vapor transport (M-PVT) method using phosphine as source. Near infrared absorption mapping was carried out on longitudinal cuts of the SiC crystals in order to verify phosphorous doping. The phosphorous concentration determined by the way of glow discharge mass spectroscopy (GDMS) measurements was up to N-D = 1.8 (.) 10(17)cm(-3).
Authors with CRIS profile
Albrecht Winnacker
Technische Fakultät
Peter Wellmann
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
How to cite
APA:
Desperrier, P., Müller, R., Winnacker, A., & Wellmann, P. (2004). Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source. Materials Science Forum, 457-460, 727-730. https://doi.org/10.4028/www.scientific.net/MSF.457-460.727
MLA:
Desperrier, Patrick, et al. "Growth of phosphorous-doped n-type 6H-SiC crystals using a modified PVT technique and phosphine as source." Materials Science Forum 457-460 (2004): 727-730.
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