In-situ Er-doping of SiC bulk single crystals

Journal article
(Original article)

Publication Details

Author(s): Müller R, Desperrier P, Seitz C, Weißer M, Magerl A, Maier M, Winnacker A, Wellmann P
Editor(s): Roland Madar, Jean Camassel and Elisabeth Blanquet
Journal: Materials Science Forum
Publisher: Trans Tech Publications
Publishing place: Switzerland
Publication year: 2004
Volume: 457-460
Conference Proceedings Title: Materials Science Forum (Volumes 457-460)
Pages range: 723-726
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


In this work the first PVT grown in-situ erbium doped SiC bulk crystal, to our knowledge, is presented. The crystal was characterised by secondary ion mass spectrometry (SIMS) and photoluminescence measurements. SIMS investigations show erbium concentrations in the range of 1.1 (.) 10" cm(-3) to 2.9 (.) 10(14) cm(-3). photoluminescence measurements between 1450 run and 1650 nm were conducted at 19 K, 77 K and 300 K. A distinct luminescence at 1540 nm corresponding to the 4 I-4(13/2) --> I-4(15/2) transition was detected even at room temperature. In the investigated temperature range, luminescence intensity shows only, a slight decrease of 16 %. Measurements with different laser powers suggest a saturation of erbium related luminescence in our experimental conditions.

FAU Authors / FAU Editors

Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät

External institutions with authors

Fraunhofer-Institut für Angewandte Festkörperphysik (IAF) / Fraunhofer Institute for Applied Solid State Physics

How to cite

Müller, R., Desperrier, P., Seitz, C., Weißer, M., Magerl, A., Maier, M.,... Wellmann, P. (2004). In-situ Er-doping of SiC bulk single crystals. Materials Science Forum, 457-460, 723-726.

Müller, Ralf, et al. "In-situ Er-doping of SiC bulk single crystals." Materials Science Forum 457-460 (2004): 723-726.


Last updated on 2018-23-11 at 06:05