In-situ X-ray measurements of defect generation during PVT growth of SiC

Journal article
(Original article)


Publication Details

Author(s): Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A
Journal: Materials Science Forum
Publication year: 2007
Volume: 556-557
Conference Proceedings Title: Materials Science Forum 556-557
Pages range: 267-270
ISSN: 0255-5476
eISSN: 1662-9752
Language: English


Abstract


A standard inductively heated PVT growth furnace modified for diffraction experiments with high energy x-rays in focussing Laue geometry was built. The growth furnace will be placed in front of a tungsten anode high energy x-ray source. The Laue diffraction pattern of the growing crystal can be detected on a CCD camera detector. Evolution of crystalline defects as a function of the growth process parameters will be infered from the diffraction experiments. The furnace design and results of first test measurements serving as proof of concept are reported.


FAU Authors / FAU Editors

Hock, Rainer Prof. Dr.
Professur für Kristallographie und Strukturphysik
Konias, Katja
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Magerl, Andreas Prof. Dr.
Lehrstuhl für Kristallographie und Strukturphysik
Miller, Michael
Ossege, Stefan
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)


How to cite

APA:
Konias, K., Hock, R., Stockmeier, M., Wellmann, P., Miller, M., Ossege, S., & Magerl, A. (2007). In-situ X-ray measurements of defect generation during PVT growth of SiC. Materials Science Forum, 556-557, 267-270. https://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.267

MLA:
Konias, Katja, et al. "In-situ X-ray measurements of defect generation during PVT growth of SiC." Materials Science Forum 556-557 (2007): 267-270.

BibTeX: 

Last updated on 2018-14-08 at 12:08