Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy
Sun J, Kamiyama S, Wellmann P, Liljedahl R, Yakimova R, Syväjärvi M (2013)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2013
Journal
Book Volume: 740-742
Pages Range: 315-318
Conference Proceedings Title: Materials Science Forum (Volumes 740-742)
DOI: 10.4028/www.scientific.net/MSF.740-742.315
Abstract
High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 mu s under the injection level of 3.5x10(12) cm(-2), which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality.
Authors with CRIS profile
Involved external institutions
Japan (JP)
Sweden (SE)How to cite
APA:
Sun, J., Kamiyama, S., Wellmann, P., Liljedahl, R., Yakimova, R., & Syväjärvi, M. (2013). Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy. Materials Science Forum, 740-742, 315-318. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.315
MLA:
Sun, Jianwu, et al. "Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy." Materials Science Forum 740-742 (2013): 315-318.
BibTeX: Download