Lateral boron distribution in polycrystalline SiC source materials

Linnarsson MK, Kaiser M, Liljedahl R, Jokubavicius V, Ou Y, Wellmann P, Ou H, Syväjärvi M (2013)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2013

Journal

Materials Science Forum Trans Tech Publications

Book Volume: 740-742

Pages Range: 397-400

Conference Proceedings Title: Materials Science Forum (Volumes 740-742)

DOI: 10.4028/www.scientific.net/MSF.740-742.397

Abstract

Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. The materials are co-doped materials with nitrogen and boron to a concentration of 1x10(18) cm(-3) and 1x10(19) cm(-3), respectively. Depth profiles as well as ion images have been recorded. According to ocular inspection, the analyzed poly-SiC consists mainly of 4H-SiC and 6H-SiC grains. In these grains, the boron concentration is higher and the nitrogen concentration is lower in the 6H-SiC compared to the 4H-SiC polytype. No inter-diffusion between grains is observed.

Authors with CRIS profile

Michl Kaiser Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik) Peter Wellmann Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Involved external institutions

Linköping University SE Sweden (SE) Technical University of Denmark / Danmarks Tekniske Universitet (DTU) DK Denmark (DK) Royal Institute of Technology / Kungliga Tekniska Högskolan (KTH) SE Sweden (SE)

How to cite

APA:

Linnarsson, M.K., Kaiser, M., Liljedahl, R., Jokubavicius, V., Ou, Y., Wellmann, P.,... Syväjärvi, M. (2013). Lateral boron distribution in polycrystalline SiC source materials. Materials Science Forum, 740-742, 397-400. https://dx.doi.org/10.4028/www.scientific.net/MSF.740-742.397

MLA:

Linnarsson, Margareta K., et al. "Lateral boron distribution in polycrystalline SiC source materials." Materials Science Forum 740-742 (2013): 397-400.

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