In situ visualization of SiC physical vapor transport crystal growth

Beitrag in einer Fachzeitschrift

Details zur Publikation

Autor(en): Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, Bogdanov M, Karpov S, Ramm M, Makarov Y
Zeitschrift: Journal of Crystal Growth
Verlag: Elsevier
Jahr der Veröffentlichung: 2005
Band: 275
Heftnummer: 1-2
Seitenbereich: e1807–e1812
ISSN: 0022-0248
Sprache: Englisch


We review a digital X-ray imaging technique which permits in situ 2D imaging of the crucible interior during physical vapor transport growth of SiC. In addition, we use 13C-labeling experiments to determine the mass transport paths in the growth cell interior. The combination of both experimental techniques enabled the analysis of the global SiC growth process like determination of growth rate, quantitative analysis of the evolution of the source material morphology, interaction of Si- and C-containing gas species with the graphite crucible wall, etc. The data will be used for comparison with numerical modeling of the SiC growth process including calculation of temperature field, mass transport and changes of the source material morphology, i.e. porosity and graphitization. In addition to the application of X-ray imaging for fundamental growth studies, monitoring of routine growth runs will also be pointed out. © 2004 Elsevier B.V. All rights reserved.

FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Wellmann, Peter Prof. Dr.-Ing.
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Winnacker, Albrecht Prof. Dr.
Technische Fakultät

Autor(en) der externen Einrichtung(en)
Semiconductor Technology Research, Inc.
Soft-Impact, Ltd.
University of Montpellier / Université Montpellier


Wellmann, P., Herro, Z.G., Winnacker, A., Püsche, R., Hundhausen, M., Masri, P.,... Makarov, Y. (2005). In situ visualization of SiC physical vapor transport crystal growth. Journal of Crystal Growth, 275(1-2), e1807–e1812.

Wellmann, Peter, et al. "In situ visualization of SiC physical vapor transport crystal growth." Journal of Crystal Growth 275.1-2 (2005): e1807–e1812.


Zuletzt aktualisiert 2018-09-08 um 12:08