Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy

Beitrag in einer Fachzeitschrift


Details zur Publikation

Autor(en): Hundhausen M, Ley L
Zeitschrift: Materials Science Forum
Verlag: Trans Tech Publications
Jahr der Veröffentlichung: 2004
Band: 457-460
Seitenbereich: 617
ISSN: 0255-5476
eISSN: 1662-9752


Abstract

Using 3C-SiC crystals grown on undulant Si(100) substrates as seed crystals, bulk growth of 3C-SiC by the modified Lely method has been demonstrated. However, particularly at elevated growth temperatures, macroscopic 6H-SiC inclusions can be observed in the grown crystals. Here we investigate the temperature dependence of the 3C- to 6H-SiC transformation of the CVD substrate by Micro Raman Spectroscopy after annealing at temperatures between 1700°C and 2100°C. At temperatures above 1800°C 3C- to 6H-SiC polytype transformation is observed that proceeds from the top side of the crystals. However, the conversion appears to be stopped at domain boundaries that are oriented along {111} planes.


FAU-Autoren / FAU-Herausgeber

Hundhausen, Martin apl. Prof. Dr.
Lehrstuhl für Laserphysik
Ley, Lothar Prof. Dr.
Naturwissenschaftliche Fakultät

Zuletzt aktualisiert 2018-09-08 um 19:53